Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors
نویسندگان
چکیده
منابع مشابه
Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors
A novel route to achieve two dimensional (2D) carrier confinement in a wedge shaped wall structure made of a polar semiconductor has been demonstrated theoretically. Tapering of the wall along the direction of the spontaneous polarization leads to the development of charges of equal polarity on the two inclined facades of the wall. Polarization induced negative (positive) charges on the facades...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep26429